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PROFET(R) BTS712N1
Smart Four Channel Highside Power Switch
* Overload protection * Current limitation * Short-circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in OFF-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection
Features
Product Summary Overvoltage Protection Operating voltage active channels: On-state resistance RON Nominal load current IL(NOM) Current limitation IL(SCr)
43 V Vbb(AZ) Vbb(on) 5.0 ... 34 V two parallel four parallel one 200 100 50 m 1.9 2.8 4.4 A 4 4 4 A
P-DSO-20
Application
* C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitive loads * Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Pin Definitions and Functions Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 Symbol Function Vbb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 4 and also for low thermal resistance IN1 Input 1 .. 4, activates channel 1 .. 4 in case of IN2 logic high signal IN3 IN4 OUT1 Output 1 .. 4, protected high-side power output OUT2 of channel 1 .. 4. Design the wiring for the OUT3 max. short circuit current OUT4 ST1/2 Diagnostic feedback 1/2 of channel 1 and channel 2, open drain, low on failure ST3/4 Diagnostic feedback 3/4 of channel 3 and channel 4, open drain, low on failure GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2) GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4) Pin configuration (top view) Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10
*
20 19 18 17 16 15 14 13 12 11
Vbb Vbb OUT1 OUT2 Vbb Vbb OUT3 OUT4 Vbb Vbb
1)
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.
Semiconductor Group
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2004-Mar-11
BTS712N1 Block diagram
Four Channels; Open Load detection in off state;
+ V bb
Voltage source V Logic Voltage sensor
Overvoltage protection
Current limit 1
Gate 1 protection
Channel 1
Leadframe
Level shifter Rectifier 1 Charge pump 1 Charge pump 2
Limit for unclamped ind. loads 1 Open load Short to Vbb detection 1 Current limit 2 Gate 2 protection
OUT1
18
3 5 4
IN1 IN2 ST1/2
Temperature sensor 1
ESD
Logic
2
GND1/2
Level shifter Rectifier 2
Limit for unclamped ind. loads 2 Open load Short to Vbb detection 2
Channel 2
OUT2
17
Load
Temperature sensor 2
Signal GND Chip 1
Chip 1
Load GND
+ V bb
Leadframe
Logic and protection circuit of chip 2 (equivalent to chip 1) 7 9 8
IN3 IN4 ST3/4
Channel 3
OUT3
14
Channel 4
OUT4
13
Load
6
GND3/4
PROFET
Signal GND Chip 2
Load GND
Chip 2 Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
Semiconductor Group
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2004-Mar-11
BTS712N1
Maximum Ratings at Tj = 25C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj,start = -40 ...+150C Load current (Short-circuit current, see page 5) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3) = 2 , td = 200 ms; IN = low or high, each channel loaded with RL = 7.1 , Operating temperature range Storage temperature range Power dissipation (DC)5 Ta = 25C: (all channels active) Ta = 85C: Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C5), IL = 1.9 A, ZL = 66 mH, 0 one channel: IL = 2.8 A, ZL = 66 mH, 0 two parallel channels: IL = 4.4 A, ZL = 66 mH, 0 four parallel channels:
see diagrams on page 10
Symbol Vbb Vbb IL VLoad
4) dump
Values 43 34 self-limited 60 -40 ...+150 -55 ...+150 3.6 1.9
Unit V V A V C W
Tj Tstg Ptot
EAS
150 320 800 1.0 -10 ... +16 2.0 5.0
mJ
Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagram page 9
VESD VIN IIN IST
kV V mA
Thermal resistance junction - soldering point5),6) junction - ambient5)
each channel: one channel active: all channels active:
Rthjs Rthja
16 44 35
K/W
2)
3) 4) 5) 6)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for input protection is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15 Soldering point: upper side of solder edge of device pin 15. See page 15
Semiconductor Group
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BTS712N1
Electrical Characteristics
Parameter and Conditions, each of the four channels
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT) each channel, Tj = 25C: RON IL = 1.8 A Tj = 150C: two parallel channels, Tj = 25C: four parallel channels, Tj = 25C: Nominal load current one channel active: two parallel channels active: four parallel channels active: 5), T = 85C, T 150C Device on PCB a j Output current while GND disconnected or pulled up; Vbb = 30 V, VIN = 0, see diagram page 10 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C: Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C: Operating Parameters Operating voltage7) Undervoltage shutdown Undervoltage restart
--
165 320 83 42 1.9 2.8 4.4 -200 200 ---
200 400 100 50 --
m
IL(NOM)
1.7 2.6 4.1 -80 80 0.1 0.1
A
IL(GNDhigh) ton toff dV/dton -dV/dtoff
10 400 400 1 1
mA s
V/s V/s
Tj =-40...+150C: Tj =-40...+150C: Tj =-40...+25C: Tj =+150C: Undervoltage restart of charge pump see diagram page 14 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: 8) Overvoltage protection Tj =-40...+150C: I bb = 40 mA
Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ)
5.0 3.5 ---34 33 -42
---5.6 0.2 --0.5 47
34 5.0 5.0 7.0 7.0 -43 ----
V V V V V V V V V
7) 8)
At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT Vbb - 2 V see also VON(CL) in circuit diagram on page 9.
Semiconductor Group
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BTS712N1
Parameter and Conditions, each of the four channels
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max ----180 160 0.35 1.2 300 300 0.8 2.8
Unit A
Standby current, all channels off Tj =25C: Ibb(off) Tj =150C: VIN = 0 9), V = 5V, Operating current Tj =-40...+150C IN IGND = IGND1/2 + IGND3/4, one channel on: IGND four channels on:
mA
Protection Functions10) Initial peak short circuit current limit, (see timing diagrams, page 12) each channel, Tj =-40C: IL(SCp) 5.5 9.5 13 4.5 7.5 11 Tj =25C: 2.5 4.5 7 Tj =+150C: two parallel channels twice the current of one channel four parallel channels four times the current of one channel Repetitive short circuit current limit, Tj = Tjt each channel IL(SCr) -4 --4 -two parallel channels -4 -four parallel channels
(see timing diagrams, page 12)
A
A
Initial short circuit shutdown time
Tj,start =-40C: toff(SC) Tj,start = 25C: VON(CL) Tjt
---150 ----
5.5 4 47 -10 -610
-----32 --
ms
(see page 11 and timing diagrams on page 12)
Output clamp (inductive load switch off)11) at VON(CL) = Vbb - VOUT Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery voltage 12) Drain-source diode voltage (Vout > Vbb) IL = - 1.9 A, Tj = +150C Diagnostic Characteristics Open load detection current Open load detection voltage
9)
V C K V mV
Tjt
-Vbb -VON
IL(off) Tj =-40..+150C: VOUT(OL)
-2
30 3
-4
A V
Add IST, if IST > 0 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL) 12) Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 9).
10)
Semiconductor Group
5
2004-Mar-11
BTS712N1
Parameter and Conditions, each of the four channels
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Input and Status Feedback13) Input resistance
(see circuit page 9)
RI Tj =-40..+150C: VIN(T+) Tj =-40..+150C: VIN(T-) Tj =-40..+150C: VIN(T) VIN = 0.4 V: IIN(off) VIN = 5 V: IIN(on) td(ST OL3)
2.5 1.7 1.5 -1 20 --
3.5 --0.5 -50 220
6 3.5 --50 90 --
k V V V A A s
Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current Tj =-40..+150C: On state input current Tj =-40..+150C: Delay time for status with open load
(see timing diagrams, page 13)
Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+25C, IST = +1.6 mA: VST(low) Tj = +150C, IST = +1.6 mA:
5.4 ---
6.1 ---
-0.4 0.6
V
13)
If ground resistors RGND are used, add the voltage drop across these resistors.
Semiconductor Group
6
2004-Mar-11
BTS712N1 Truth Table
Channel 1 and 2 Channel 3 and 4 (equivalent to channel 1 and 2)
Normal operation
Chip 1 Chip 2
IN1 IN3
IN2 IN4
OUT1 OUT3
OUT2 OUT4
ST1/2 ST3/4 BTS 711L1
ST1/2 ST3/4 BTS 712N1 H H H H L H H L H H L15) H H L15) H H H L L H L H L H
Open load
Channel 1 (3)
L L H H L L H L H X L L H L H X L X H L H X X X
L H L H L H X L L H L H X L L H L H X X X L H X
L L H H Z Z H L H X H H H L H X L L L L L X X L
L H L H L H X Z Z H L H X H H H L L L X X L L L
H H H H H(L14)) H L H(L14)) H L L15) H H(L16)) L15) H H(L16)) H L L H L H L H
Channel 2 (4)
Short circuit to Vbb
Channel 1 (3)
Channel 2 (4)
Overtemperature
both channel
Channel 1 (3) Channel 2 (4) Undervoltage/ Overvoltage
L = "Low" Level H = "High" Level
X = don't care Z = high impedance, potential depends on external circuit Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4 have to be configured as a 'Wired OR' function with a single pull-up resistor.
14) 15)
With additional external pull up resistor An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 16) Low resistance to V may be detected by no-load-detection bb
Semiconductor Group
7
2004-Mar-11
BTS712N1
Terms
V Ibb bb I IN1 I IN2 I ST1/2 V IN1 V IN2 VST1/2 3 5 4 Leadframe IN1 IN2 ST1/2 V bb OUT1 PROFET Chip 1 GND1/2 2 R IGND1/2 GND1/2 OUT2 18 VON1 VON2 I L1 I L2 V V OUT1 Leadframe I IN3 I IN4 I ST3/4 IN3 V IN4 VST3/4 7 9 8 IN3 IN4 ST3/4 V bb OUT3 PROFET Chip 2 GND3/4 6 R I GND3/4 GND3/4 OUT4 14 V ON3 V ON4 I L3 I L4 V
17
13
OUT3
V OUT2
V OUT4
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20 External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 or a single resistor RGND = 75 for reverse battery protection up to the max. operating voltage
Semiconductor Group
8
2004-Mar-11
BTS712N1
Overvoltage protection of logic part Input circuit (ESD protection), IN1...4
R IN I
IN
GND1/2 or GND3/4
+ V bb
RI Logic
V
Z2
ESD-ZD I GND
IN
I
I
R ST
ST
V
Z1 GND
ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
R GND
Signal GND
Status output, ST1/2 or ST3/4
+5V
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 k typ., RGND = 150
R ST(ON)
Reverse battery protection
ST
5V - Vbb
GND
ESDZD
R ST
IN ST
RI
Logic OUT
Power Inverse Diode
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
GND R GND RL
Power GND
Inductive and overvoltage output clamp,
OUT1...4
+Vbb VZ V ON OUT
Signal GND
RGND = 150 , RI = 3.5 k typ, Temperature protection is not active during inverse current operation.
Open-load detection, OUT1...4
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
PROFET
Power GND
VON clamped to VON(CL) = 47 V typ.
OFF
I L(OL) V OUT
Logic unit
Open load detection
Signal GND
Semiconductor Group
9
2004-Mar-11
BTS712N1
GND disconnect
(channel 1/2 or 3/4)
V bb IN1 IN2 ST VVV IN1 IN2 ST Ibb Vbb OUT1 PROFET OUT2 GND V GND
Inductive load switch-off energy dissipation
E bb E AS Vbb PROFET OUT ELoad
IN
=
ST GND ZL
{
R L
L
EL
ER
Any kind of load. In case of IN = high is VOUT VIN - VIN(T+). Due to VGND > 0, no VST = low signal available.
Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt,
2
GND disconnect with GND pull up
(channel 1/2 or 3/4)
IN1 V IN1 IN2 V IN2 ST
Vbb OUT1 PROFET OUT2 GND
with an approximate solution for RL > 0 : EAS= IL* L (V + |VOUT(CL)|) 2*RL bb
ln (1+ |V
IL*RL
OUT(CL)|
)
V bb
V ST
V GND
Maximum allowable load inductance for a single switch off (one channel)5)
L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0 L [mH] 1000
Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available.
Vbb disconnect with energized inductive load
100
OUT1 IN2 ST PROFET OUT2 GND
IN1 high
Vbb
10
V bb
For an inductive load current up to the limit defined by EAS (max. ratings see page 3 and diagram on page 10) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load the whole load current flows through the GND connection.
1 1 1.5 2 2.5 3
IL [A]
Semiconductor Group
10
2004-Mar-11
BTS712N1
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 1.8 A, IN = high RON [mOhm]
500 450 400 350 300 250 200 150 100 50
0 1.25
Typ. ground pin operating current
IGND = f (Vbb,Tj ); VIN = high (one channel on) IGND [mA]
1.5
Tj = 150C
1
85C 25C -40C
0.75
Tj = -40C 25C 85C 150C
0.5
0.25
0 0 10 20 30 40
0
10
20
30
40
50
Vbb [V]
Vbb [V]
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1...4 = low Ibb(off) [A]
250
Typ. initial short circuit shutdown time
toff(SC) = f (Tj,start ); Vbb =12 V toff(SC) [msec] 6
5 200 4 150 3 100
2
50
1
0 -50
0
50
100
150
200
0 -50
0
50
100
150
200
Tj [C]
Ibb(off) includes four times the current IL(off) of the open load detection current sources.
Tj,start [C]
Semiconductor Group
11
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BTS712N1
Timing diagrams
Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels
Figure 1a: Vbb turn on:
IN1 IN2
Figure 2b: Switching an inductive load,
IN
V bb
ST
V
OUT1
V
OUT
V
OUT2
I
ST open drain t
L
t
Figure 2a: Switching a lamp:
IN
Figure 3a: Turn on into short circuit: shut down by overtemperature, restart by cooling
IN1 other channel: normal operation
ST
I
V
L1
OUT
I
L(SCp) I L(SCr)
I
L
ST
t
t off(SC)
t
The initial peak current should be limited by the lamp and not by the initial short circuit current IL(SCp) = 7.5 A typ. of the device. Heating up of the chip may require several milliseconds, depending on external conditions (toff(SC) vs. Tj,start see page 11)
Semiconductor Group
12
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BTS712N1
Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2)
IN1/2 IN2 I
L1
Figure 5a: Open load: detection in OFF-state, turn on/off to open load
IN1 channel 2: normal operation
+I
L2
I L(SCp)
VOUT1
I L(SCr)
I L1 channel 1: open load
t ST1/2
off(SC) ST
t
d(ST OL3)
t d(ST OL3) t
t
td(ST,OL3) depends on external circuitry because of high impedance *) IL = 30 A typ
Figure 4a: Overtemperature: Reset if Tj IN
Figure 6a: Undervoltage:
IN
ST
V bb V
bb(under)
Vbb(u cp) Vbb(u rst)
V
OUT
V OUT
T
J
ST open drain t t
Semiconductor Group
13
2004-Mar-11
BTS712N1
Figure 6b: Undervoltage restart of charge pump
V on VON(CL)
off-state
on-state
V
bb(over)
V
bb(u rst)
V
bb(o rst)
V V
bb(under)
bb(u cp)
IN = high, normal load conditions. Charge pump starts at Vbb(ucp) = 5.6 V typ.
Figure 7a: Overvoltage:
IN
Vbb
V ON(CL)
Vbb(over)
V bb(o rst)
V
OUT
ST
off-state
V bb t
Semiconductor Group
14
2004-Mar-11
BTS712N1
Package and Ordering Code
Standard P-DSO-20-9
BTS712N1 Ordering Code Q67060-S7001-A2
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
All dimensions in millimetres 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side
Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings
Definition of soldering point with temperature Ts: upper side of solder edge of device pin 15.
Pin 15
Printed circuit board (FR4, 1.5mm thick, one layer 70m, 6cm2 active heatsink area) as a reference for max. power dissipation Ptot, nominal load current IL(NOM) and thermal resistance Rthja
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Semiconductor Group
15
2004-Mar-11

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